08:40 - 08.50

JF de Marneffe, imec, Leuven, BE
Remi Dussart, GREMI, Orleans, FR

08:50 - 09:30

09:30 - 09:50

Edge placement error study of a recessed bitline contact by means of feature scale plasma etching simulations

09:50 - 10:10

A Virtual Metrology Model for Plasma Etching Process with Partially Labeled Data

10:10 - 10:30

Elementary surface reaction probabilities in F- and CF- based plasmas at cryogenic etching conditions using MD simulations *

10:30 - 10.50

10:50 - 11:30

11:30 - 11:50

Hydrogen-based post-etching chemistries for phase-change random access memory patterning

11:50 - 12:10

High-aspect-ratio oxide etching in inductively coupled plasma systems using low-frequency bias power

12:10 - 12:30

Patterning challenges and opportunities in IGZO TFTs device architectures

12:30 - 14.00

13:00 - 13.30

14:00 - 14:40

14:40 - 15:00

Limits and interest of a low surface temperature for plasma etching processes

15:00 - 15:20

Physisorption of C4F8 on surfaces cooled at cryogenic temperature

15:20 - 15:40

Plasma-based pseudo-wet etching for SiN using hydrogencontained fluorocarbon gases at cryogenic temperatures

15:40 - 18.00

08:40 - 09.20

INVITED - Zhiying Chen, TEL (USA)

New directions for plasma diagnostics in the era of atomic precision semiconductor device manufacturing

09:20 - 09.40

Amkir Abbas Zolfaghari, Fraunhofer IPM, Dresden (Germany)

Characterisation of RF pulsed CCP sputter processes with Quadrupole Mass Spectrometry

09:40 - 10.00

Michael Klick, Plasmetrex (Germany)

Plasma Parameters Measurement and Process Models for F Gas Flow Reduction in DRIE

10:00 - 10.20

Thomas Gilmore, Impedans Ltd (Ireland)

Insights and Applications of Retarding Field ion Energy Analyzers for Plasma Etching

10:20 - 10.40

Coffee break

10:40 - 11.20

INVITED - Thorsten Lill, Lam Research (USA)

Elementary processes in cryo etching of dielectric high aspect ratio structures

11:20 - 11.40

Rémi Dussart, GREMI, Orléans (France)

Physicochemical mechanisms involved in SiF4/O2 plasma cryogenic deposition and etching

11:40 - 12.00

Michael K. T. Mo, CLPS, Nagoya University (Japan)

The effects of SiO2 substrate cooling on radical species production in CF4/H2 plasma

12:00 - 13.20

Lunch break

12:50 - 13.20

imec cleanroom tour

13:20 - 14:00

INVITED - Christophe Vallée, CNSE, university of Albany (USA)

ASD on EUV Metal-oxide resists

14:00 - 14:20

Rémi Vallat, imec v.z.w. (Belgium)

Break healing and LER mitigation for patterning of thin layers

14:20 - 14:40

Hyeongwu Lee, SKKU Advanced Institute of Nanotechnology (Rep. of Korea)

Plasma-Enhanced Atomic Layer Etching of HfO2 with Plasma Fluorination and Ligand-Exchange using BCl3

14:40 - 15:00

Dominik Metzler, IBM Research, Albany (USA)

Via Chamfer Control through ILD Etch Conditions and Cap Material

15:00 - 15:20

Hojin Kang, SKKU School of Chemical Engineering (Rep. of Korea)

15:20 - 15:40

Coffee break

15:40 - 16:20

INVITED - Adrie Mackus, Eindhoven University of Technology (The Netherlands)

Plasma-assisted isotropic atomic layer etching for fabrication of nanoelectronics

16:20 - 16:40

Mathieu Stigliani, Université Grenoble Alpes, CEA, LETI

16:40 - 17:00

Jean-Francois de Marneffe, imec v.z.w. (Belgium)

17:00 - 17:20

Carlos Cunha, imec v.z.w. (Belgium)

08:40 - 09.20

INVITED - Mitsuhiro Omura, KIOXIA Corporation (Japan)

Expectation for cryo etching technology for 3D flash memory

09:20 - 09.40

Konstantina Fillipidou, imec v.z.w. (Belgium)

Reduction of high GWP gas consumption for SiO2 etch at low temperature

09:40 - 10.00

Jack Nos, GREMI, Orléans (France)

Estimation of a condensation coefficient to characterize C4F8 physisorption on SiO2 at cryogenic temperatures

10:00 - 10.20

Coffee break

10:40 - 11.00

Aurélien Tavernier, Université Grenoble Alpes, CEA/LETI (France)

Photoresist on polymer etch challenges for imager filters patterning

11:00 - 11.20

Saron Sales de Mello, Université Grenoble Alpes, CNRS, CEA/LETI (France)

On the plasma etching mechanisms of high aspect ratio aluminum nitride nanowires patterning

11:20 - 11.40

Tatiana Chancelle Mbouja Signe, IMN, Nantes (France)

Plasma-surface interactions during Vanadium Oxide (V2O3) Thin Films Etching Process in Fluorine-Based Plasmas

11:40 - 12.00

Lucas Jacoustre, Université Grenoble Alpes, CNRS, CEA/LETI (France)

How to produce high aspect ratio GaN and AlN nanopillar arrays with m-oriented facets by combining dry and wet processes for the fabrication of next generation deep ultraviolet light-emitting diodes

12:00 - 13.00

Lunch break

13:00 - 13.20

David Cascales, Université Grenoble Alpes, CEA, LETI

Impact of the GaN plasma etching parameters on the gate morphology for lateral and vertical power devices

13:20 - 13.40

Mihai Lazar, University of Technology of Troyes (France)

SiC plasma etching technology processes for power and optoelectronic devices

13:40 - 14.00

Shushi Kaushik, imec v.z.w. (Belgium)

Polysilicon gate etching for spin qubits

14:00 - 14.20

Lamyae Hamraoui, GREMI, Orléans (France) (France)

Optimization of Atomic Layer Etching Process for Gallium Nitride Using SF6 and Ar Plasma

14:20 - 14.35

E. Dupuy and Ph. Bezard, imec v.z.w. (Belgium)

Announcing the winners of the BEST STUDENT ORAL presentation and BEST POSTER - handling the awards

14:35 - 14.50

Conference organizers

Announcing the next conferences / closure ceremony

15:40 - 18.00

A. Kondi, NCSR Demokritos (Greece)

3D geometrical modeling for etch-induced LER transfer

15:40 - 18.00

G. Kokkoris, NCSR Demokritos (Greece)

Transition from isotropic to rippling roughness pattern on inclined plasma-etched polymeric substrates: A computational study

15:40 - 18.00

T. Seifert, University of Technology Chemnitz (Germany)

Model-based comparison of SF6-based bulk silicon etch process between different ICP plasma chambers

15:40 - 18.00

N. Iurii, Silicon Austria Labs GmbH (Austria)

Mechanism of selective SiO2/photoresist etching under ICP-RIE conditions in a C4F8/H2 gas mixture

15:40 - 18.00

N. Dittmar, Fraunhofer ENAS, Chemnitz (Germany)

Influence of etching process parameters on SiO2 sidewall angles using CF4, CHF3 and O2 in a two step dry etching process

15:40 - 18.00

A. Rahali, GREMI, Orléans (France)

Cryogenic plasma etching processes of black silicon for microfluidic applications

15:40 - 18.00

Y. Han, SKKU university (rep. of Korea)

High Aspect Ratio Etching of SiO2 with Low-Global Warming C5F10O Plasma at Low Temperature

15:40 - 18.00

M. Adjabi, GREMI, Orléans (France)

Temperature effects on plasma parameters in Cryogenic Etching

15:40 - 18.00

D. W. Kim, SMRC, Korea Institute of Machinery & Materials (Rep. of Korea)

In-situ measurement of plasma electron density uniformity by patch-type sensor

15:40 - 18.00

S. Kim, Chungnam, National University, Daejeon (Rep. of Korea)

Discharge Characteristics of Low-Pressure Plasma Source Capable of Ignition in the Sub-mTorr Range

15:40 - 18.00

J. Kannan, Fraunhofer IPMS-CNT, Dresden (Germany)

Quasi-Atomic layer etching process transfer from lab to 300mm line and its optimisation

15:40 - 18.00

L. C. Wegner, Fraunhofer ENAS, Chemnitz (Germany)

Investigation of photoresist etching masks for XMR device fabrication

15:40 - 18.00

M. Haase, Fraunhofer ENAS, Chemnitz (Germany)

Patterning Titanium Oxide Using Nanoimprint Lithography for Fabrication of Surface Relief Gratings

15:40 - 18.00

J. Spettel, Silicon Austria Labs GmbH (Austria)

Aluminum nitride on insulator: optimization of etching process for integrated photonic applications

15:40 - 18.00

Th. Chevolleau, Université Grenoble Alpes, CEA/LETI (France)

Metal line patterning for 300 mm superconducting BEOL

15:40 - 18.00

Yang Han, imec v.z.w. (Belgium)

Optimization of Bevel Clean in Passivation Module

15:40 - 18.00

Sanghyun You, Ajou University (Rep. of Korea)

Control of SiO2 etch profiles using heptafluoropropyl methyl ether as an etchant with low global warming potential

15:40 - 18.00

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